silicon epitaxial planar pin diode ite symbol min typ max unit test condition -65 to +17 ? 1SV121 400v 1.0a 1 of 2 web site: www.taychipst.com features e-mail: sales@taychipst.com maximum ratings and electrical characteristics low capacitance.(c=0.7pf max) small glass package (mhd) enables easy mounting and high reliability. absolute maximum ratings (ta = 25?) item symbol value unit reverse voltage v r 100 v forward current i f 100 ma power dissipation p d 250 mw junction temperature t j 175 ? storage temperature t stg electrical characteristics (ta = 25?) forward voltage v f 1.1 v i f = 50 ma reverse current i r 100 na v r = 30 v capacitance c 0.7 pf v r = 50 v, f = 1 mhz r f1 1.0 k ? i f = 10 ?, f = 100 mhz forward resistance r f2 10 ? i f = 10 ma, f = 100 mhz
ratings and characteristic curves 1SV121 2 of 2 e-mail: sales@taychipst.com web site: www.taychipst.com 0 0.8 1.0 10 -5 10 -7 10 -9 forward voltage v (v) f forward current i (a) f 0.2 0.4 0.6 10 -12 10 -11 10 -10 10 -6 10 -8 10 -4 10 -3 reverse voltage v (v) r reverse current i (a) r 10 -12 10 -10 02040 60 80 100 10 -11 10 10 10 -9 -7 -8 10 10 10 1.0 10 10 -1 -2 -1 1.0 2 10 2 10 f=1mhz capacitance c (pf) reverse voltage v (v) r fig.1 forward current vs. forward voltage fig.2 reverse current vs. reverse voltage fig.3 capacitance vs. reverse voltage 10 10 10 10 1.0 10 10 10 forward current i (a) f forward resistance r ( ) f ? 3 2 -6 -5 -4 -3 10 4 10 -2 10 5 f=100mhz fig.4 forward resistance vs. forward current silicon epitaxial planar pin diode 1SV121 400v 1.0a
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